Serving the RFIC/MMIC industry, GCS offers a wide portfolio of process technologies such as InGaP HBT, InP HBT, PHEMT, HFET, GaN HEMT, THz Mixer Diode and Integrated Passive Devices (IPD) to enhance our customers’ product performance and market competitiveness. A family of five (5) InGaP HBT processes are in production, each tailored to provide an optimum performance (high power and superior linearity) for a unique application in the cellular handset, wireless communication and base station markets.
Several GaAs HEMT foundry processes are also in production for applications from low cost handset switches, PAs and LNA up to 40GHz, to high linearity an high power PAs. GaN-on-Silicon process for high power RF PAs is also qualified for production.
| Technology |
Process |
Application |
| InGaP HBT |
P1 |
High
Linearity & High Power RF Cellular Handset, Wifi, WiMAX, Infrastructure
PAs |
| P2 |
High
Linearity & High Power RF Cellular Handset, Wifi, WiMAX, Infrastructure
PAs |
| P5 |
High
Ruggedness & High Power RF Cellular GSM/DCS Handset, Wifi, WiMAX,
Infrastructure PAs |
| P6 |
High
Power RF Infrastructure PAs |
| P7 |
High
Power RF Infrastructure PAs at 12V bias |
| VCO |
Ultra
Low Phase Noise Voltage Controlled Oscillator (VCO) |
| GaAs HEMT |
0.5um Switch |
Low-cost
Handset Switch |
| 0.5/0.25um Power |
PA and
LNA up to 40 GHz |
| E/D-mode PHEMT |
Integrated
Multifunction ICs |
| 0.5/0.25um HFET |
High
Linearity & High Power RF Infrastructure PAs |
| 0.25um Low Noise |
Super
Low Noise LNAs |
| RF Passive |
High Q RF Passive |
Filter
and Matching/Bias Network |
| GaN HEMT |
0.5/0.25um GaN/Si |
High
Voltage & High Power RF Infrastructure PAs (Customer Proprietary Process) |
| 0.5um GaN/SiC |
High
Voltage & High Power RF Infrastructure PAs |
